Program : Control and Instrumentation Engineering (CIE)

Degree : MSc/MEng

Course Code : ACE 641

Course Name : Power Semiconductor Devices

Course Category : Compulsory Core Courses

Semester : First Semester

Credit Hours : 3

Review of structures, characteristics, modelling, safe operating requirement and protection of silicon/silicon-carbide/gallium-nitride based power semiconductor devices namely:
i. Power Diodes.
ii. Power Transistors (Bipolar Junction Transistors (BJTs), Fields Effect Transistors (FETs), Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs)).
iii. Thyristors (Silicon controlled Rectifiers (SCRs), Gate Turn off Thyristors (GTOs), Triacs and MOS controlled Thyristors (MCTs)).
Power semiconductor device integration and fabrication techniques to achieve high breakdown voltages, high current carrying capability, low on resistance, fast switching speed and high reliability